? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network parameter absolute maximum operating temperature -65 o c to +125 o c storage temperature -65 o c to +150 o c junction temperature +175 o c applied reverse voltage - 50v rf c.w. incident power +30dbm c.w. bias current +25c 20ma max. operating conditions for a combination of rf power, d.c. bias and temperature: +30dbm cw @ 15ma (per diode) @+85c ma4sw210b-1 ma4sw310b-1 features ? broad bandwidth specified 2 to 18 ghz ? usable up to 26 ghz ? integrated bias network ? low insertion loss / high isolation ? fully monolithic construction ? glass encapsulate ? polymer protective coating ? rohs compliant description the ma4sw210b-1 and ma4sw310b-1 devices are sp2t and sp3t broadband switches with an integrated bias networks utilizing m/a-com technology solutions hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows the in corporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between circuit elements, this combination of silicon and glass gives hmic devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80au/20sn solders or electrically conductive silver epoxy. yellow areas indicate bond pads
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network ma4sw210b-1 (spdt) electrical specifications @ t amb = +25 o c, 20ma bias current ma4sw310b-1 (sp3t) electrical specifications @ t amb = +25 o c, 20ma bias current parameter frequency minimum nominal maximum units insertion loss 2 ghz 1.5 1.8 db 6 ghz 0.70 1.0 db 12 ghz 0.90 1.2 db 18 ghz 1.2 1.8 db isolation 2 ghz 55 60 db 6 ghz 47 50 db 12 ghz 40 45 db 18 ghz 36 40 db 2 ghz 14 db 6 ghz 15 db 12 ghz 15 db 18 ghz 13.0 db switching speed 1 - 50 ns input return loss parameter frequency minimum nominal maximum units insertion loss 2 ghz 1.6 2.0 db 6 ghz 0.8 1.1 db 12 ghz 1.0 1.3 db 18 ghz 1.3 1.9 db isolation 2 ghz 54 59 db 6 ghz 47 50 db 12 ghz 40 45 db 18 ghz 36 40 db 2 ghz 14 db 6 ghz 15 db 12 ghz 16 db 18 ghz 14 db switching speed 1 - 50 ns input return loss 1. typical switching speed measured from 10% to 90% of detect ed rf signal driven by ttl compatible drivers using rc output spiking network, r = 50 ? 200 ? , c = 390 ? 560pf. note:
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network typical rf performance at t amb = +25c, 20ma bias current isolation vs frequency ma4sw210b-1 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 101214161820222426 frequency, ghz isolation, d b insertion loss vs frequency ma4sw210-b1 -8 -6 -4 -2 0 2 0 2 4 6 8 101214161820222426 frequency, ghz insertion loss, d b isolation vs frequency ma4sw310b-1 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 101214161820222426 frequency, ghz isolation, db insertion loss vs frequency ma4sw310b-1 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 f requency, ghz insertion loss, db return loss vs frequency ma4sw310b-1 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 101214161820222426 f requency, ghz return loss, db return loss vs frequency ma4sw210b-1 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 101214161820222426 frequency, ghz return loss, db
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network ma4sw210b-1 series diode junction temperature vs. incident power at 8 ghz 20 40 60 80 100 120 140 10.00 15.00 20.00 25.00 30.00 35.00 c.w. incident power ( dbm ) tjunction ( deg. c ) series diode_5ma series diode_10ma series diode_20ma series diode_40ma 5 m a 20 10 m a 40 m a ma4sw210b-1 compression power vs. incident power at 8 ghz 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 10.00 15.00 20.00 25.00 30.00 35.00 c.w. incident power ( dbm ) compression power ( db ) series diode_5ma series diode_10ma series diode_20ma series diode_40ma 5 ma 10 ma 20 ma 40 ma note: the ma4sw310b-1 contains the same pi n diodes and will have similar performance.
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network operation of the ma4s w 210b-1 and ma4sw310b-1 operation of the ma4sw210b-1 and ma4sw310b-1 pin diode sw itches is achieved by simultaneous application of dc currents to the bias pads. the required le vels for the different states are shown in the tables below. the control currents should be supplied by constant current sources. the nominal 40 ? - 60 ? pull-up resistor voltage @ j4 and j5 is usually -1v for ?20ma and +20ma for +1v. driver connections ma4sw210b-1 control level i dc @ condition of rf output condition of rf output j4 j5 j1 - j2 j1 - j3 -20ma +20ma low loss isolation +20ma -20ma isolation low loss driver connections ma4sw310b-1 control level i dc @ condition of rf output condition of rf output condition of rf output j5 j6 j7 j1 - j2 j1 - j3 j1 - j4 -20ma +20ma +20ma low loss isolation isolation +20 ma -20ma +20ma isolation low loss isolation +20ma +20ma -20ma isolation isolation low loss equivalent circuit ma4sw210b-1 equivalent circuit ma4sw310b-1
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network wire bonding thermosonic wedge bonding using 0.003? x 0.0002 5? ribbon or 0.001? diameter gold wire is recommended. a heat stage temperature of 150 o c and a force of 18 to 22 grams should be used. if ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. rf bond wires should be k ept as short as possible. chip mounting the hmic switches have ti-pt-au back metal. they can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. mount ing surface must be clean and flat. eutectic die attachment: an 80/20, gold-tin, eutectic solder pr eform is recommended with a work surface temperature of 255 o c and a tool tip temperature of 265 o c. when hot gas is applied, the temperature at the chip should be 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 20 seconds. no more than three se conds should be required for attachment. solders rich in tin should not be used. epoxy die attachment: a minimum amount of epoxy, 1-2 mils thick, should be used to attach chip. a thin epoxy fillet should be visible around the outer perim eter of the chip after placement. cure epoxy per product instructions. typically 150c for 1 hour. ma4sw210b-1 chip outline 1 , 2 & dimensions notes: 1. topside and backside me tallization is gold , 2.5m thick typical. 2. yellow areas indicate wire bonding pads inches millimeters min max min max a 0.066 0.070 1.680 1.780 b 0.048 0.052 1.230 1.330 c 0.004 0.006 0.100 0.150 d 0.004 0.006 0.090 0.140 e 0.012 0.013 0.292 0.317 f 0.029 0.030 0.735 0.760 g 0.030 0.031 0.766 0.791 h 0.029 0.030 0.732 0.757 j 0.005 ref. 0.129 ref. k 0.005 ref. 0.129 ref. dim
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. rev. v4 ma4sw210b-1 ma4sw310b-1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. hmic? silicon pin diode switch es with integrated bias network ma4sw310b-1 chip outline 1,2 & dimensions notes: 1. topside and backside meta llization is gold , 2.5m thick typical. 2. yellow areas indicate wire bonding pads inches millimeters min max min max a 0.071 0.072 1.807 1.833 b 0.071 0.072 1.797 1.823 c 0.0045 0.0055 0.100 0.150 d 0.031 0.032 0.781 0.807 e 0.029 0.030 0.732 0.758 f 0.006 0.007 0.152 0.178 g 0.004 0.005 0.099 0.125 h 0.005 0.006 0.125 0.151 j 0.034 0.035 0.871 0.897 k 0.064 0.065 1.617 1.643 l 0.066 0.067 1.683 1.709 m 0.005 ref. 0.1250 ref. n 0.0046 ref. 0.1180 ref. dim part number package ma4sw210b-1 gel pack ma4sw310b-1 gel pack ordering information
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